Nanotechnology

Nanotechnology is the engineering of functional systems at the molecular scale. Scientists use the unique properties of nano-scale materials and structures to create exciting new products and processes unattainable by conventional techniques.

TraskBritt has attorneys with an extensive understanding and knowledge in a wide range of disciplines in which nanotechnology is applied. They have expertise in the complexities of nanotechnology, both legally and technically and are fluent in the nanotechnology language. Their technical backgrounds include mechanical, chemical, cellular, molecular, biotech, electronics, medical & surgical, integrated circuits, microprocessors, ceramics, polymers, semi-conductors, natural resources, explosives, propellants and pharmaceuticals. Because of our extensive technical training, we understand the intricacies and subtleties of this technology, enabling us to provide a complete range of IP protection for your technology in a cost-effective manner

Representative Patents

US 8,900,963 B2 – METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES, AND RELATED STRUCTURES

US 9,556,031 – METHOD FOR PRODUCING SOLID CARBON BY REDUCING CARBON OXIDES

US 9,087,699 – METHODS OF FORMING AN ARRAY OF OPENINGS IN A SUBSTRATE, AND RELATED METHODS OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE

US 9,397,145 – MEMORY STRUCTURES AND RELATED CROSS-POINT MEMORY ARRAYS, ELECTRONIC SYSTEMS, AND METHODS OF FORMING MEMORY STRUCTURES

US 9,564,442 B2 – METHODS OF FORMING CONTACTS FOR A SEMICONDUCTOR DEVICE STRUCTURE, AND RELATED METHODS OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE

US 9,112,138 B2 – METHODS OF FORMING RESISTIVE MEMORY ELEMENTS

US 9,553,263 – RESISTIVE MEMORY ELEMENTS INCLUDING BUFFER MATERIALS, AND RELATED MMORY CELLS, MEMORY DEVICES, ELECTRONIC SYSTEMS

US 9,054,295 B2 – PHASE CHANGE MEMORY CELLS INCLUDING NITROGENATED CARBON MATERIALS, METHODS OF FORMING THE SAME, AND PHASE CHANGE MEMORY DEVICES INCLUDING NITROGENATED CARBON MATERIALS

US 8,932,933 B2 – METHODS OF FORMING HYDROPHOBIC SURFACES ON SEMICONDUCTOR DEVICE STRUCTURES, METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES, AND SEMICONDUCTOR DEVICE STRUCTURES

Nanotechnology Professionals

Scott R. Cleere

Attorney

Jacob D. Lott

Registered Patent Agent

John Fulton, Jr.

Shareholder

Brian G. Prince

Shareholder

Allen C. Turner

Shareholder

John J. Oskorep

Shareholder

James C. Watson

Shareholder

Marylou J. Lavoie

Of Counsel

Joseph A. Walkowski

Senior Counsel (Deceased)

Warunee Srisiri-Sisson

Shareholder

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